Перегляд за автором "Korchovyi, A.A."

Результати 1-7 з 7

Chemical-dynamic polishing of InAs, InSb, GaAs and GaSb crystals with (NH₄)₂Cr₂O₇-HBr-citric acid etching composition

Levchenko, I.V.; Tomashyk, V.M.; Stratiychuk, I.B.; Malanych, G.P.; Stanetska, A.S.; Korchovyi, A.A. (Functional Materials, 2018)

The chemical dissolution of InAs, InSb, GaAs and GaSb crystals in (NH₄)₂Cr₂O₇-HBr-C₆H₈O₇ etching solutions has been investigated. The dissolution rate of the semiconductor materials has been measured as a function of etchant ...
Chemical polishing of InAs, InSb, GaAs and GaSb

Levchenko, I.V.; Tomashyk, V.M.; Stratiychuk, I.B.; Malanych, G.P.; Stanetska, A.S.; Korchovyi, A.A. (Functional Materials, 2017)

The mechanism and kinetics of chemical dissolution of InAs, InSb, GaAs and GaSb in (NH₄)₂Cr₂O₇-HBr-C₄H₆O₆ etching mixtures have been studied. Influence of tartaric acid on the parameters of chemical-dynamic polishing and ...
Investigation of superlattice structure parameters using quasi-forbidden reflections

Kladko, V.P.; Datsenko, L.I.; Korchovyi, A.A.; Machulin, V.F.; Lytvyn, P.M.; Shalimov, A.V.; Kuchuk, A.V.; Kogutyuk, P.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)

We studied possibilities of a nondestructive X-ray technique for testing short-period strained GaAs-AlAs superlattices. An analysis of the quasi-forbidden 200 reflections may be used for determination of superlattice layer ...
Nanopatterning Au chips for SPR refractometer by using interference lithography and chalcogenide photoresist

Dan’ko, V.A.; Dorozinsky, G.V.; Indutnyi, I.Z.; Myn’ko, V.I.; Ushenin, Yu.V.; Shepeliavyi, P.E.; Lukaniuk, M.V.; Korchovyi, A.A.; Khrystosenko, R.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)

This study reports on development of the interference lithography (IL) technique applying the resist based on chalcogenide glass films for fabrication of gold chips in the nform of periodic surface nanostructures for surface ...
Optimization of bromine-emerging etching compositions K₂Cr₂O₇-HBr-ethylene glycol for forming a polished surface of CdTe, ZnxCd₁-xTe and CdxHg₁-xTe

Chayka, M.V.; Tomashyk, Z.F.; Tomashyk, V.M.; Malanych, G.P.; Korchovyi, A.A. (Functional Materials, 2019)

The chemical dissolution of the CdTe single crystals and ZnxCd₁-xTe , ZnxCd₁-xTe solid solutions in aqueous solution of K₂Cr₂O₇-HBr-ethylene glycol in reproducible hydrodynamics conditions has been investigated for the ...
Structure and optical properties of AlN films obtained using the cathodic arc plasma deposition technique

Shapovalov, A.P.; Korotash, I.V.; Rudenko, E.M.; Sizov, F.F.; Dubyna, D.S.; Osipov, L.S.; Polotskiy, D.Yu.; Tsybri, Z.F.; Korchovyi, A.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)

Aluminum nitride (AlN) film coatings have been obtained by a new technique of hybrid helikon-arc ion-plasma deposition. Possibility to combine the magnetic-filtered arc plasma deposition technique with a treatment in RF ...
Structure and optical properties of AlN films obtained using the cathodic arc plasma deposition technique

Shapovalov, A.P.; Korotash, I.V.; Rudenko, E.M.; Sizov, F.F.; Dubyna, D.S.; Osipov, L.S.; Polotskiy, D.Yu.; Tsybrii, Z.F.; Korchovyi, A.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)

Aluminum nitride (AlN) film coatings have been obtained by a new technique of hybrid helikon-arc ion-plasma deposition. Possibility to combine the magnetic-filtered arc plasma deposition technique with a treatment in RF ...

Результати 1-7 з 7

Пошук

Розширений пошук

Перегляд

Вся бібліотека

Перегляд за автором "Korchovyi, A.A."

Репозиторій DSpace/Manakin

Перегляд за автором "Korchovyi, A.A."

Пошук

Перегляд

Вся бібліотека

Мій обліковий запис